Phase changeable memory cells and methods of fabricating the...

Details Phase changeable memory cells and methods of fabricating the... Phase changeable memory cells and methods of fabricating the...

2006-09-12

2006-09-12

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S382000, C257S004000, C257S528000, C257S536000

Reexamination Certificate

active

07105396

ABSTRACT:
A phase changeable memory cell that includes a substrate, a bottom electrode, a phase changeable material layer pattern, and a top electrode. The bottom electrode is on the substrate. The phase changeable material layer pattern is on the bottom electrode. The top electrode is on the phase changeable material layer pattern, and has a tip that extends toward the bottom electrode.

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German Office Action for German Application No. 103 51 017.6-33 on Apr. 20, 2005.

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