Phase-change semiconductor memory device and method of...

Details Phase-change semiconductor memory device and method of... Phase-change semiconductor memory device and method of...

2007-06-26

2007-06-26

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

11254853

ABSTRACT:
A semiconductor memory device and a method of programming the same, the semiconductor memory device includes a plurality of memory cells, each of the memory cells having a plurality of phase change variable resistors and a selection transistor. Each of the phase change variable resistors has a first end connected to one of a plurality of bit lines and a second end connected to a drain of the selection transistor. The selection transistor has a gate connected to a word line and a source connected to a reference voltage. The memory device is programmed by activating a word line associated with a selected memory cell, thereby turning on the selection transistor, applying a reset pulse to bit lines of the selected memory cell, and applying a set pulse to selected bit lines of the selected memory cell.

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patent: 1326254 (2003-07-01), None
patent: 15-229537 (2003-08-01), None

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