Semiconductor devices and methods for fabricating the same

Details Semiconductor devices and methods for fabricating the same Semiconductor devices and methods for fabricating the same

2007-02-27

2007-02-27

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29201, C257SE21585, C438S182000, C438S259000, C438S270000

Reexamination Certificate

active

11026643

ABSTRACT:
Semiconductor devices and methods for fabricating the same are disclosed. A disclosed method includes forming a trench in a region where a main gate pattern is to be formed, forming an insulating film having a fixed thickness in the trench, and fixing a scale of the main gate pattern filled in the trench with the thickness of the insulating film. The trench elongates a current flow passage formed by a shape of the main gate pattern.

REFERENCES:
patent: 5386132 (1995-01-01), Wong
patent: 5920100 (1999-07-01), Wen
patent: 6093606 (2000-07-01), Lin et al.
patent: 6130453 (2000-10-01), Mei et al.
patent: 6232632 (2001-05-01), Liu
patent: 2003/0075758 (2003-04-01), Sundaresan et al.

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