Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2004-12-30
2008-08-12
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257SE45002
Reexamination Certificate
active
07411208
ABSTRACT:
A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
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Gu, Si-Peng, Hou, Li-Song, Zeng, Xian-Cheng and Zhao, Qi-Tao, Optical Properties of Ge—Sb—Te—O Phase-Change Films, Optical instruments, Dec. 2001, pp. 23-26, vol. 23, No. 5-6, China Academic Journal, China.
Ahn Su-Jin
Cho Sung-Lae
Hwang Young-Nam
Jeong Chang-Wook
Koh Gwan-Hyeob
Diaz José R
Jackson Jerome
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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