Phase change memory device generating program current and...

Details Phase change memory device generating program current and... Phase change memory device generating program current and...

2007-09-07

2010-02-02

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

C365S163000, C365S148000, C365S192000, C365S189090

Reexamination Certificate

active

07656719

ABSTRACT:
A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation.

REFERENCES:
patent: 2004/0027907 (2004-02-01), Ooishi
patent: 2005/0141261 (2005-06-01), Ahn
patent: 2005/0195633 (2005-09-01), Choi et al.
patent: 2006/0087876 (2006-04-01), Cho et al.
patent: 10-2004-0007112 (2004-02-01), None
patent: 1020050070700 (2005-07-01), None
patent: 1020050089500 (2005-09-01), None
patent: 100564636 (2006-03-01), None

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