Phase change memory device and method of operating the same

Details Phase change memory device and method of operating the same Phase change memory device and method of operating the same

2007-01-30

2007-01-30

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S185180, C365S185290

Reexamination Certificate

active

11193413

ABSTRACT:
A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

REFERENCES:
patent: 6754107 (2004-06-01), Khouri et al.
patent: 6956774 (2005-10-01), Lung et al.
patent: 7042760 (2006-05-01), Hwang et al.

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