Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S027000
Reexamination Certificate
active
11064132
ABSTRACT:
A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
REFERENCES:
patent: 6252244 (2001-06-01), Reinberg
patent: 6420725 (2002-07-01), Harshfield
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 6512241 (2003-01-01), Lai
Lai Li-Shyue
Lin Wen-Chin
Tang Denny
Wang Chao-Hsiung
Haynes and Boone LLP
Lindsay, Jr. Walter
Taiwan Semiconductor Manufacturing Company , Ltd.
Ullah Elias
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