Phase change memory device and memory cell array thereof

Details Phase change memory device and memory cell array thereof Phase change memory device and memory cell array thereof

2005-12-29

2008-11-18

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S063000, C365S113000

Reexamination Certificate

active

07453722

ABSTRACT:
A phase change memory device is provided which includes a memory cell array including a plurality of memory cells, and a write driver for supplying a program current to the memory cell array through a global bitline. The memory cell array includes first and second cell regions, a first local bitline connected to the first cell region, a second local bitline connected to the second cell region, and a select region disposed between the first and second cell regions and supplying the program current supplied through the global bitline to the first and second local bitlines in response to a local select signal.

REFERENCES:
patent: 6754107 (2004-06-01), Khouri et al.
patent: 6982902 (2006-01-01), Gogl et al.
patent: 7335906 (2008-02-01), Toda
patent: 2004/0174732 (2004-09-01), Morimoto
patent: 2006/0203541 (2006-09-01), Toda
patent: 08-153393 (1996-06-01), None
patent: 0166420 (1999-02-01), None
patent: 100206917 (1999-04-01), None
patent: 1020000043969 (2000-07-01), None
patent: 102000058001 (2000-09-01), None
patent: 10-2005-0079030 (2005-08-01), None

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