Penetrating implant for forming a semiconductor device

Details Penetrating implant for forming a semiconductor device Penetrating implant for forming a semiconductor device

2011-05-17

2011-05-17

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S142000, C438S199000, C438S217000, C438S302000, C438S305000, C438S306000, C438S307000, C438S407000, C438S520000, C438S528000, C438S540000, C438S548000, C438S918000, C257SE21324, C257SE21336, C257SE21443, C257SE21466, C257SE21618

Reexamination Certificate

active

07943468

ABSTRACT:
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.

REFERENCES:
patent: 6589847 (2003-07-01), Kadosh et al.

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