PECVD oxide-nitride and oxide-silicon stacks for 3D memory...

Details PECVD oxide-nitride and oxide-silicon stacks for 3D memory... PECVD oxide-nitride and oxide-silicon stacks for 3D memory...

2010-10-06

2011-12-13

Chiang, Jack (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S712000, C438S585000, C438S396000, C438S710000, C257SE21485, C257SE21409, C257S288000, C257S530000, C427S255120, C427S099300

Reexamination Certificate

active

08076250

ABSTRACT:
A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.

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