PE-ALD of TaN diffusion barrier region on low-k materials

Details PE-ALD of TaN diffusion barrier region on low-k materials PE-ALD of TaN diffusion barrier region on low-k materials

2007-05-01

2007-05-01

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C257SE21584

Reexamination Certificate

active

10709865

ABSTRACT:
Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.

REFERENCES:
patent: 2003/0124262 (2003-07-01), Chen et al.
patent: 2004/0009307 (2004-01-01), Koh et al.
patent: 2005/0095443 (2005-05-01), Kim et al.
patent: 2005/0101132 (2005-05-01), Kim et al.
patent: 2005/0269703 (2005-12-01), Dunn et al.
patent: 2006/0019494 (2006-01-01), Cao et al.
patent: 2006/0027167 (2006-02-01), Ishizaka et al.
patent: 2006/0094219 (2006-05-01), Soda
Rossnagel, S.M., et al., “Plasma-Enhanced Atomic Layer Deposition of Ta and Ti for Interconnect Diffusion Barriers”, J Vac Sci Technol B 18(4), Jul./Aug. 2000, pp. 2016-2020.

Affiliated with

Also associated with

Rating

PE-ALD of TaN diffusion barrier region on low-k materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PE-ALD of TaN diffusion barrier region on low-k materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PE-ALD of TaN diffusion barrier region on low-k materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769028