Patterning with rigid organic under-layer

Details Patterning with rigid organic under-layer Patterning with rigid organic under-layer

2006-10-17

2006-10-17

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S197000, C438S694000, C438S942000, C438S947000, C257SE21023

Reexamination Certificate

active

07122455

ABSTRACT:
For patterning an IC (integrated circuit) material, a rigid organic under-layer is formed over the IC material, and the rigid organic under-layer is patterned to form a rigid organic mask structure. In addition, the rigid organic mask structure is trimmed to lower a critical dimension of the rigid organic mask structure beyond the limitations of traditional BARC mask structures. Any portion of the IC material not under the rigid organic mask structure is etched away to form an IC structure.

REFERENCES:
patent: 5965461 (1999-10-01), Yang et al.
patent: 6010829 (2000-01-01), Rogers et al.
patent: 6214637 (2001-04-01), Kim et al.
patent: 6420097 (2002-07-01), Pike et al.
patent: 6794230 (2004-09-01), Huang et al.
patent: 6933227 (2005-08-01), Adetutu et al.
patent: 6936539 (2005-08-01), Yin et al.
patent: 6939794 (2005-09-01), Yin et al.

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