Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2007-03-12
2008-12-23
Rosasco, Stephen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
Reexamination Certificate
active
07468240
ABSTRACT:
An isolated light-shielding pattern formed from a light-shielding film region101and a phase shift region102is formed on a transparent substrate100serving as a mask. The phase shift region102has a phase difference with respect to a light-transmitting region of the transparent substrate100. Moreover, the width of the phase shift region102is set such that a light-shielding property of the phase shift region102becomes at least about the same as that of a light-shielding film having the same width.
REFERENCES:
patent: 5354632 (1994-10-01), Dao et al.
patent: 5718829 (1998-02-01), Pierrat
patent: 5733687 (1998-03-01), Tanaka et al.
patent: 5766805 (1998-06-01), Lee et al.
patent: 5824438 (1998-10-01), Choi et al.
patent: 5908718 (1999-06-01), Ishida et al.
patent: 6044007 (2000-03-01), Capodieci
patent: 6083275 (2000-07-01), Heng et al.
patent: 6106979 (2000-08-01), Pierrat
patent: 0 401 795 (1990-12-01), None
patent: 3-11345 (1991-01-01), None
patent: 3-177841 (1991-08-01), None
patent: 5-142751 (1993-06-01), None
patent: 05-333524 (1993-12-01), None
patent: 6-061117 (1994-03-01), None
patent: 7-72612 (1995-03-01), None
patent: 09-034099 (1997-02-01), None
patent: 9-127676 (1997-05-01), None
patent: 9-127677 (1997-05-01), None
patent: 9-329888 (1997-12-01), None
patent: 10-326005 (1998-12-01), None
patent: 2000-105451 (2000-04-01), None
H.Y. Liu et al., “The Application of Alternating Phase-shifting Masks to 140nm Gate Patterning (II): Mask Design and Manufacturing Tolerances”, Proceedings of SPIE, vol. 3334, pp. 2-14, Feb. 1998.
H. Watanabe et al., “Transparent Phase Mask”, The 51th Annual Technical Meeting of the Japan Society of Applied Physics, 27p-ZG-1, p. 490, Sep. 1990.
McDermott Will & Emery LLP
Panasonic Corporation
Rosasco Stephen
LandOfFree
Patterning method using photomask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Patterning method using photomask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning method using photomask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4041353