Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-31
2005-05-31
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S638000, C257S390000, C257S316000, C257S371000
Reexamination Certificate
active
06900124
ABSTRACT:
A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gate layer extends in a predefined direction and is substantially parallel to other stacked gate layers. An interlayer insulating layer is deposited over the plurality of stacked gate layers, and a contact hole is patterned between a first stacked gate layer of the plurality of stacked gate layers and a second stacked gate layer of the plurality of stacked gate layers. The contact hole is formed in an elongated shape, wherein a major axis of the contact hole is substantially parallel to the stacked gate layers. A conductive layer is deposited in the contact hole and excess conductive material is removed.
REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5636002 (1997-06-01), Garofalo
patent: 5674773 (1997-10-01), Koh et al.
patent: 5973374 (1999-10-01), Longcor
patent: 6515329 (2003-02-01), Lee et al.
patent: 6521522 (2003-02-01), Cho
Levenson et al., “The Vortex Mask: Making 80nm contacts with a twist!”
Kim Hung-eil
Lyons Christopher F.
Minvielle Anna
Plat Marina V.
Subramanian Ramkumar
Advanced Micro Devices , Inc.
Le Dung A.
Renner , Otto, Boisselle & Sklar, LLP
LandOfFree
Patterning for elliptical Vss contact on flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Patterning for elliptical Vss contact on flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning for elliptical Vss contact on flash memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3383776