Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-07-09
2000-01-04
Gulakowski, Randy
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
438714, 438720, 438742, 216 72, 216 78, H01L 21302
Patent
active
060106034
ABSTRACT:
Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed "enhanced physical bombardment". Enhanced physical bombardment requires an increase in ion density and/or an increase in ion energy of ionized species which strike the substrate surface. To assist in the removal of excited copper atoms from the surface being etched, the power to the ion generation source and/or the substrate offset bias source may be pulsed. In addition, when the bombarding ions are supplied from a remote source, the supply of these ions may be pulsed. Further, thermal phoresis may be used by maintaining a substrate temperature which is higher than the temperature of a surface in the etch chamber. It is also possible to use a chemically reactive species in combination with the physical ion bombardment without causing copper corrosion problems, so long as the concentration of the chemically reactive ion component is sufficiently low that the etching is carried out in a physical bombardment dominated etch regime.
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Ma Diana Xiaobing
Ye Yan
Yin Gerald
Alanko Anita
Applied Materials Inc.
Church Shirley L.
Gulakowski Randy
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