Pattern formation method

Details Pattern formation method Pattern formation method

1998-06-22

2000-06-13

Gibson, Sharon

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430323, 430324, G03F 700

Patent

active

060748044

ABSTRACT:
After forming a resist film by coating a semiconductor substrate with a resist, pattern exposure is conducted by irradiating the resist film with ArF excimer laser with a mask used. A silylation agent of 4-dimethylsiloxy-3-penten-2-one is supplied onto the surface of the resist film having been subjected to the pattern exposure, thereby forming a silylated layer in an unexposed portion of the resist film. The resist film is etched by using the silylated layer as a mask, so as to remove an exposed portion of the resist film. Thus, a resist pattern can be formed out of the resist film.

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Notice of Reasons for Rejection in Taiwanese Application No. 85108702 dated Dec. 15, 1998.

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