Pattern fabricating method

Details Pattern fabricating method Pattern fabricating method

1989-02-07

1991-01-01

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430 5, 430967, 378 34, 378 35, G03C 516

Patent

active

049817710

ABSTRACT:
When a pattern is to be fabricated by a lithography using radiation on a heavy metal layer formed on a substrate, secondary electrons are generated in a diverging form from the heavy metal layer by irradiation with a radioactive ray to expose the resist. As a result, the accuracy of the pattern to be formed on the resist is reduced. In order to prevent this, a layer to be transferred, a substrate to be worked, a mask and so on are formed with a film capable of absorbing the secondary electrons so that secondary electrons generated from the heavy metal layer may not reach the resist film. Although a pattern having a thickness of 2 microns or less could not be fabricated according to the prior art, a pattern as thin as 1.5 microns can be fabricated by the method of the present invention.

REFERENCES:
patent: 4288283 (1981-09-01), Umezaki et al.
patent: 4576884 (1986-03-01), Reisman
patent: 4714668 (1987-12-01), Uneno et al.
Saitoh et al., "Submicron Pattern Replication . . . in X-Ray Lithography", J. Vac. Sci. Technol., B2(1), Jan.-Mar. 1984.

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