Passivated copper conductive layers for microelectronic applicat

Details Passivated copper conductive layers for microelectronic applicat Passivated copper conductive layers for microelectronic applicat

1998-02-10

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438620, 438768, 427123, 4273766, 4273831, 20419215, 20419217, 257700, 257701, 257706, 257712, 257713, 257717, H01L 214763

Patent

active

06057223&

ABSTRACT:
A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.

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