Partial implantation method for semiconductor manufacturing

Details Partial implantation method for semiconductor manufacturing Partial implantation method for semiconductor manufacturing

2005-08-04

2010-02-16

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with preceding diverse...

C438S514000, C438S527000, C257SE21334, C257SE21337, C257SE29109, C250S492210

Reexamination Certificate

active

07662705

ABSTRACT:
Disclosed herein is a partial implantation method for manufacturing semiconductor devices. The method involves implantation of dopant ions at different densities into a plurality of wafer regions, including first and second regions, defined in a wafer by means of a boundary line. In the method, first, second and third implantation zones are defined. The first implantation zone is the remaining part of the first region except for a specific part of the first region close to the boundary line, the second implantation zone is the remaining part of the second region except for a specific part of the second region close to the boundary line, and the third implantation zone is the remaining part of the wafer except for the first and second implantation zones. Then, dopant ions are implanted into the first implantation zone at a first density, into the second implantation zone at a second density different from the first density, and into the third implantation zone at a third density that is a midway value between the first and second densities.

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