Parallel plate sputtering device with RF powered auxiliary elect

Details Parallel plate sputtering device with RF powered auxiliary elect Parallel plate sputtering device with RF powered auxiliary elect

1998-03-05

2000-11-28

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429808, 20429814, C23C 1434

Patent

active

061530689

ABSTRACT:
The present invention provides a sputtering device provided with two electrodes I and II of parallel plate type within a vessel inside which pressure can be reduced, wherein: a target to be sputtered is placed on said electrode I, and a base body on which a film is to be deposited is placed on said electrode II, with the target and the base body being opposed to each other; a process gas is introduced into said vessel from a gas supply system; radio frequency power is applied to said target through at least said electrode I so as to excite plasma between the electrode I and the electrode II; characterized in that: outside said vessel, is provided a means for introducing magnetic field horizontal at least to a surface to be sputtered of said target.

REFERENCES:
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5316645 (1994-05-01), Yamagami et al.
patent: 5431799 (1995-07-01), Mosely et al.
patent: 5800688 (1998-09-01), Lantsman et al.

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