Pad stack with a poly SI etch stop for TEOS mask removal with RI

Details Pad stack with a poly SI etch stop for TEOS mask removal with RI Pad stack with a poly SI etch stop for TEOS mask removal with RI

1996-12-26

1998-07-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, H01L 218242

Patent

active

057768080

ABSTRACT:
A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.

REFERENCES:
patent: 5593912 (1997-01-01), Rajeevakumar

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