Oxygen elimination for device processing

Details Oxygen elimination for device processing Oxygen elimination for device processing

2008-06-03

2008-06-03

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S770000, C438S775000, C438S778000, C438S787000, C438S791000, C257SE21180, C257SE21679

Reexamination Certificate

active

07381620

ABSTRACT:
A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method further includes forming remaining portions of the semiconductor device in the processing chamber without the presence of oxygen.

REFERENCES:
patent: 5885870 (1999-03-01), Maiti et al.
patent: 2005/0048794 (2005-03-01), Brask et al.

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