Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-26
2010-02-09
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S683000, C438S686000, C257SE21169
Reexamination Certificate
active
07659204
ABSTRACT:
A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
REFERENCES:
patent: 7300869 (2007-11-01), Sun et al.
patent: 2004/0099215 (2004-05-01), Danek et al.
patent: 2005/0211548 (2005-09-01), Gung et al.
patent: 2005/0263390 (2005-12-01), Gung et al.
patent: 2006/0030151 (2006-02-01), Ding et al.
patent: 2006/0076232 (2006-04-01), Miller et al.
patent: 2006/0251872 (2006-11-01), Wang et al.
Chung Hua
Gopalraja Praburam
Tang Xianmin
Wang Jenn Yue
Wang Rongjun
Applied Materials Inc.
Ghyka Alexander G
Law Office of Charles Guenzer
LandOfFree
Oxidized barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Oxidized barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxidized barrier layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4196176