Oxide spacers as solid sources for gallium dopant introduction

Details Oxide spacers as solid sources for gallium dopant introduction Oxide spacers as solid sources for gallium dopant introduction

1997-12-18

2000-09-12

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438143, 438303, 438367, 438542, 438373, 438548, 438564, H01L 218238

Patent

active

061177199

ABSTRACT:
Impurities are formed in the active region of a semiconductor substrate by diffusion from a gate electrode sidewall spacer. A gate electrode is formed on a semiconductor substrate with a gate dielectric layer therebetween. Sidewall spacers are formed on the side surfaces of the gate electrode. Dopant atoms are subsequently introduce to transform the spacers into solid dopant sources. Dopant atoms are diffused from the spacers into the semiconductor substrate to form first doped regions.

REFERENCES:
patent: 3943016 (1976-03-01), Marcotte
patent: 4666557 (1987-05-01), Collins et al.
patent: 4691435 (1987-09-01), Anantha et al.
patent: 4728617 (1988-03-01), Woo et al.
patent: 4755479 (1988-07-01), Miura
patent: 4757026 (1988-07-01), Woo et al.
patent: 4780426 (1988-10-01), Koshino et al.
patent: 4784965 (1988-11-01), Woo et al.
patent: 4908326 (1990-03-01), Ma et al.
patent: 4916083 (1990-04-01), Monkowski et al.
patent: 5234852 (1993-08-01), Liou
patent: 5501997 (1996-03-01), Lin et al.
patent: 5599734 (1997-02-01), Byun et al.
patent: 5710054 (1998-01-01), Gardner et al.
patent: 5756383 (1998-05-01), Gardner
patent: 5759885 (1998-06-01), Son
patent: 5814545 (1998-09-01), Seddon et al.
patent: 5821147 (1998-10-01), Kizilyalli

Affiliated with

Also associated with

Rating

Oxide spacers as solid sources for gallium dopant introduction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxide spacers as solid sources for gallium dopant introduction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide spacers as solid sources for gallium dopant introduction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-95474