Oxidation method for semiconductor process

Details Oxidation method for semiconductor process Oxidation method for semiconductor process

2006-10-24

2006-10-24

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S762000, C438S765000, C438S766000, C438S769000, C438S770000

Reexamination Certificate

active

07125811

ABSTRACT:
An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.

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