Oxidation method and oxidation system

Details Oxidation method and oxidation system Oxidation method and oxidation system

2006-08-11

2008-11-18

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S694000, C438S758000, C257SE21282, C257SE21283

Reexamination Certificate

active

07452826

ABSTRACT:
An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel22capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel22through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.

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