Orientless wafer processing on an electrostatic chuck

Details Orientless wafer processing on an electrostatic chuck Orientless wafer processing on an electrostatic chuck

1997-05-29

2000-06-20

Dang, Thi

Coating apparatus

Gas or vapor deposition

Work support

118723R, 156345, 438 14, 438715, 216 59, 427 8, 20419213, 20419233, 20429815, C23C 1600, H01L 2100, C23F 102

Patent

active

06077357&

ABSTRACT:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

REFERENCES:
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5882417 (1999-03-01), Van de Ven et al.

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