Organosilane hardmask compositions and methods of producing...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C252S079100, C438S706000, C438S723000, C438S633000, C257S049000, C430S270100, C528S030000, C528S043000

Reexamination Certificate

active

07629260

ABSTRACT:
Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I)in-line-formulae description="In-line Formulae" end="lead"?Si(OR1)(OR2)(OR3)R4in-line-formulae description="In-line Formulae" end="tail"?wherein R1, R2and R3may each independently be alkyl acetoxy or oxime; and R4may be hydrogen, alkyl, aryl or arylalkyl; andwherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.

REFERENCES:
patent: 6602779 (2003-08-01), Li et al.
patent: 7288282 (2007-10-01), Graham et al.
patent: 2007/0185298 (2007-08-01), Baikerikar et al.
patent: 2007/0212886 (2007-09-01), Uh et al.
patent: 2000-0077018 (2000-12-01), None

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