Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-26
2007-06-26
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S639000, C438S592000, C438S151000, C438S099000, C257SE21256, C257SE21029, C430S329000, C430S331000
Reexamination Certificate
active
10927572
ABSTRACT:
A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacrificial material to define a trench for the semiconductor device, removing the first photoresist layer without affecting the sacrificial material, repatterning a second photoresist layer on the sacrificial material to define the trench for the semiconductor device, forming the trench, and removing the second photoresist layer and the sacrificial material completely after the trench is formed.
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PCT International Search Report for PCT Application PCT/US2005/025993, Mailed Jun. 7, 2006, 10 pages.
Anya Igwe U.
Applied Materials Inc.
Baumeister B. William
Blakely & Sokoloff, Taylor & Zafman
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