Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S082000, C438S099000, C438S780000, C257S213000, C257S288000, C257S401000, C257SE51005
Reexamination Certificate
active
10433959
ABSTRACT:
The invention relates to an organic field-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The improved structuring is obtained by introducing, using a doctor blade, the functional polymer in the mold layer in which recesses are initially produced by imprinting.
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Bernds Adolf
Clemens Wolfgang
Haring Peter
Kurz Heinrich
Vratzov Borislav
CarellaByrne et al.
Le Thao P.
Olstein Elliot M.
PolyIC GmbH & Co. KG
Squire William
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