Organic BARC etch process capable of use in the formation of...

Details Organic BARC etch process capable of use in the formation of... Organic BARC etch process capable of use in the formation of...

2006-03-20

2010-11-09

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S072000, C438S700000, C438S702000, C438S703000, C438S710000, C438S718000

Reexamination Certificate

active

07828987

ABSTRACT:
In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.

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