Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-14
2011-10-18
Pham, Hoai V (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C257SE21632
Reexamination Certificate
active
08039331
ABSTRACT:
An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
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Allen Scott D.
Cabral, Jr. Cyril
Dezfulian Kevin K.
Fang Sunfei
Greene Brian J.
International Business Machines - Corporation
Percello, Esq. Louis J.
Pham Hoai V
Scully , Scott, Murphy & Presser, P.C.
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