Optically testing the lateral dimensions of a pattern

Optics: measuring and testing – By configuration comparison – With photosensitive film or plate

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350162R, 356354, 356394, G01N 2132

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active

042003962

ABSTRACT:
A method of optically testing the lateral dimensions of a pattern of material disposed on a substrate comprises applying the material to both the main area of the substrate and a test area on the same substrate, and selectively removing the material from both areas on the substrate simultaneously to form respectively the pattern on the main area and a diffraction grating on the test area. The diffraction grating is exposed to a beam of light, and the intensity of two of the diffracted beams is measured to obtain a ratio signal (I.sub.2 /I.sub.1), which is then utilized to determine the lateral dimensional tolerance of the integrated circuit pattern.

REFERENCES:
patent: 3756695 (1973-09-01), Mino et al.
patent: 3988564 (1976-10-01), Garvin et al.
patent: 4030835 (1977-06-01), Firester et al.
patent: 4039370 (1977-08-01), Kleinknecht
Vasil'eva et al., "Measurement of the Selective Growth and Etching Rates of GaAs", Inorganic Materials, vol. 12, Feb. 1976, pp. 162-164.
Rassudova et al., "Precision Diffraction Gratings for Metrologic Purposes", Optics and Spectroscopy, Aug. 1961, pp. 136-137.
Bilenko et al., "Monitoring the Thickness of Layers During the Process of Selective Accretion or Etching"; Translation from Pribory I Tekhnika Eksperimenta, No. 5, pp. 231-233, Sep.-Oct. 1972.

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