Optical proximity correction of L and T shaped patterns on negat

Details Optical proximity correction of L and T shaped patterns on negat Optical proximity correction of L and T shaped patterns on negat

1999-11-18

2000-06-27

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 5, 430 30, G03F 900

Patent

active

060805277

ABSTRACT:
An optical proximity correction method for rectifying pattern on negative photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.

REFERENCES:
patent: 5792581 (1998-08-01), Ohnuma
patent: 5821014 (1998-10-01), Chen et al.
patent: 5858591 (1999-01-01), Lin et al.
patent: 5871874 (1999-02-01), Tonnai
patent: 5879844 (1999-03-01), Yamamoto et al.

Affiliated with

Also associated with

Rating

Optical proximity correction of L and T shaped patterns on negat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical proximity correction of L and T shaped patterns on negat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical proximity correction of L and T shaped patterns on negat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1782821