Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2007-09-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21651, C257SE21018, C257SE21011
Reexamination Certificate
active
10896491
ABSTRACT:
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
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Chen Chun-Yao
Chen Chung-Yi
Lee Hsiang-Fan
Shen C. Y.
Tu Kuo-Chi
Dinh Thu-Huong
Lebentritt Michael
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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