Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-11
2010-02-02
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000, C438S393000, C438S396000, C257SE21008, C257SE27071
Reexamination Certificate
active
07655518
ABSTRACT:
An on-chip bypass capacitor and method of manufacturing the same, the on-chip bypass capacitor including at least two capacitor arrays, each capacitor array including a first layer connecting the at least two capacitor arrays in series, each capacitor array including a plurality of capacitors, each of the plurality of capacitors including a second layer connecting the plurality of capacitors in parallel. The on-chip bypass capacitor may be part of a chip which also includes a memory cell array including at least one cell capacitor.
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Office Action for corresponding German Application No. 10-2004-047571.7.
Kim Dae-Hwan
Lee Jung-Hwa
Estrada Michelle
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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