Nonvolatile semiconductor memory device having strap region...

Details Nonvolatile semiconductor memory device having strap region... Nonvolatile semiconductor memory device having strap region...

2007-02-13

2007-02-13

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S296000, C257S311000, C257S314000, C257SE27084, C257SE27091, C257SE21646, C257SE21660, C438S211000, C438S257000, C438S673000

Reexamination Certificate

active

11167793

ABSTRACT:
In a nonvolatile semiconductor memory device having a memory cell array region and a strap region for providing voltage to the memory cell array region, in the memory cell array region, a plurality of word lines and a plurality of source lines are formed in a row direction, and one source line is formed between two word lines. In the strap region, the word lines and the source lines extend in the row direction and are collinear with, and without separation from, the word lines and the source lines of the memory cell array region, and each of the word lines and the source lines has a word line contact and a source line contact.

REFERENCES:
patent: 6407941 (2002-06-01), Chevallier et al.
patent: 6483749 (2002-11-01), Choi et al.
patent: 6541324 (2003-04-01), Wang
patent: 6611062 (2003-08-01), Kurjanowicz
patent: 1998-0006326 (1998-03-01), None
patent: 1020010019754 (2001-03-01), None
patent: 2002-0097284 (2002-12-01), None
patent: WO 01/88985 (2001-11-01), None

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