Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257SE29309, C257SE21423, C257SE21679, C257S314000, C438S264000, C365S185110
Reexamination Certificate
active
07982261
ABSTRACT:
A nonvolatile semiconductor memory device includes a first stacked body on a silicon substrate, and a second stacked body is provided thereon. The first stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a first portion of a through-hole extending in a stacking direction is formed. The second stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a second portion of the through-hole is formed. A memory film is formed on an inner face of the through-hole, and a silicon pillar is buried in an interior of the through-hole. A central axis of the second portion of the through-hole is shifted from a central axis of the first portion, and a lower end of the second portion is positioned lower than an upper portion of the first portion.
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Aochi Hideaki
Fukuzumi Yoshiaki
Ishiduki Megumi
Katsumata Ryota
Kidoh Masaru
Ahmad Khaja
Kabushiki Kaisha Toshiba
Landau Matthew C
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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