Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2010-10-26
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257SE21646, C257SE21654, C257SE21657, C257SE21659, C257SE27084, C257SE21652, C257SE27096, C257SE29309, C257SE27103, C257SE27026, C257SE21423, C257SE21679
Reexamination Certificate
active
07821058
ABSTRACT:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insulating film, and a second insulating film formed around the charge storage film; an electrode extending two-dimensionally to surround the charge storage insulating film, the electrode having a groove; and a metal silicide formed on a sidewall of the groove.
REFERENCES:
patent: 5599724 (1997-02-01), Yoshida
patent: 5707885 (1998-01-01), Lim
patent: 5973356 (1999-10-01), Noble et al.
patent: 7387935 (2008-06-01), Masuoka et al.
patent: 7586149 (2009-09-01), Yoon et al.
patent: 2003-78044 (2003-03-01), None
U.S. Appl. No. 12/575,906, filed Oct. 8, 2009, Ozawa.
Tetsuo Endoh, et al., “Novel Ultrahigh-Density Flash Memory With a Stacked-Surrounding Gate Transistor (S-SGT) Structured Cell”, IEEE Transactions on Electron Devices, vol. 50, No. 4, Apr. 2003, pp. 945-951.
U.S. Appl. No. 12/396,062, filed Mar. 2, 2009, Kito et al.
U.S. Appl. No. 12/714,905, filed Mar. 1, 2010, Fukuzumi et al.
Aochi Hideaki
Fukuzumi Yoshiaki
Katsumata Ryota
Kidoh Masaru
Kito Masaru
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Spalla David
Warren Matthew E
LandOfFree
Nonvolatile semiconductor memory and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4235432