Nonvolatile semiconductor memory and making method thereof

Details Nonvolatile semiconductor memory and making method thereof Nonvolatile semiconductor memory and making method thereof

2007-09-11

2007-09-11

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C438S683000, C257S316000, C257SE21422, C257SE21681, C365S182000, C365S185260

Reexamination Certificate

active

11005015

ABSTRACT:
A nonvolatile semiconductor memory device of a split gate structure having a gate of low resistance suitable to the arrangement of a memory cell array is provided. When being formed of a side wall spacer, a memory gate is formed of polycrystal silicon and then replaced with nickel silicide. Thus, its resistance can be lowered with no effect on the silicidation to the selection gate or the diffusion layer.

REFERENCES:
patent: 5879999 (1999-03-01), Park et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 6440796 (2002-08-01), Sung
patent: 6841823 (2005-01-01), Lojek et al.
patent: 7132718 (2006-11-01), Hisamoto et al.
patent: 2001/0012662 (2001-08-01), Hsieh et al.
patent: 2002/0001903 (2002-01-01), Borel et al.
patent: 2002/0045319 (2002-04-01), Ogura et al.
patent: 2003/0034518 (2003-02-01), Yoshikawa
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 2005/0272235 (2005-12-01), Wu et al.
patent: 2002-231829 (2002-08-01), None
Sze, “Nonvolatile Memory Devices”,Physics of Semiconductor Devices, 2ndEdition, 1981, pp. 496-506.
Chen et al., “A Novel Flash Memory Device withS—Plit Gate Source Side Injection and ONO Charge Storage Stack (SPIN)”,Symposium on VLSI Technology Digest of Technical Papers, 1997, pp. 63-64.
Wu et al., “A Novel High-Speed, 5-Volt Programming EPROM Structure”,IEEE International Electron Device Meeting, 1986, pp. 584-587.
Chan et al, “The Impact of Gate—Induced Drain Leakage Current on MOSFET Scaling”,IEEE International Electron Device Meeting, 1987, pp. 718-721.

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