Nonvolatile semiconductor device including a floating gate,...

Details Nonvolatile semiconductor device including a floating gate,... Nonvolatile semiconductor device including a floating gate,...

2011-03-08

2011-03-08

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21626, C257SE21640

Reexamination Certificate

active

07902024

ABSTRACT:
A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.

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