Nonvolatile memory devices and methods of manufacturing the...

Details Nonvolatile memory devices and methods of manufacturing the... Nonvolatile memory devices and methods of manufacturing the...

2011-06-28

2011-06-28

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C257S315000, C257SE21683, C257SE29129

Reexamination Certificate

active

07968405

ABSTRACT:
A method of manufacturing a nonvolatile memory device is provided. The method includes forming an isolation layer in a semiconductor substrate defining an active region and forming a molding pattern on the isolation layer. A first conductive layer is formed on a sidewall and a top surface of the molding pattern and on the semiconductor substrate. The first conductive layer on the top surface of the molding pattern is selectively removed forming a conductive pattern. The conductive pattern includes a body plate disposed on the active region and a protrusion which extends from an edge of the body plate onto the sidewall of the molding pattern. The molding pattern is then removed. An inter-gate dielectric layer is formed on the isolation layer and the conductive pattern. Nonvolatile memory devices manufactured using the method are also provided.

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English Abstract for Publication No. 1019990072300.
English Abstract for Publication No. 1020070000216.

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