Nonvolatile memory devices and methods of fabricating the same

Details Nonvolatile memory devices and methods of fabricating the same Nonvolatile memory devices and methods of fabricating the same

2006-07-18

2009-06-30

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257SE21680, C257SE21690

Reexamination Certificate

active

07553725

ABSTRACT:
A nonvolatile memory cell includes a source region and a drain region which are disposed in a semiconductor substrate and spaced apart from each other, a source selection line and a drain selection line disposed over the semiconductor substrate between the source region and the drain region. The source selection line and the drain selection line are disposed adjacent to the source region and the drain region, respectively. The nonvolatile memory cell further includes a cell gate pattern disposed over the semiconductor substrate between the source selection line and the drain selection line, a first floating impurity region provided in the semiconductor substrate under a gap region between the source selection line and the cell gate pattern and a second floating impurity region provided in the semiconductor substrate under a gap region between the drain selection line and the cell gate pattern. Distances between the cell gate pattern and the selection lines are less than widths of the selection lines.

REFERENCES:
patent: 6018178 (2000-01-01), Sung
patent: 6121072 (2000-09-01), Choi et al.
patent: 6335243 (2002-01-01), Choi et al.
patent: 6376310 (2002-04-01), Kim
patent: 6551899 (2003-04-01), Yu et al.
patent: 6680230 (2004-01-01), Arai et al.
patent: 6818944 (2004-11-01), Lee
patent: 6861685 (2005-03-01), Choi
patent: 6984558 (2006-01-01), Slotboom et al.
patent: 7053443 (2006-05-01), Lee et al.
patent: 2004/0175886 (2004-09-01), Slotboom et al.
patent: 2005/0009273 (2005-01-01), Chang et al.
patent: 2000296444 (2000-10-01), None
patent: 2005033223 (2005-02-01), None
patent: 20040025245 (2004-03-01), None
patent: 299446 (1997-03-01), None
patent: 483003 (2002-04-01), None
patent: 525175 (2003-03-01), None
patent: 200303094 (2003-08-01), None
patent: 98/18165 (1998-04-01), None
patent: WO 2005031859 (2005-04-01), None
English Abstract for Publication No. WO 98/18165.
English Abstract for Publication No. 2000-296444.
English Abstract for Publication No. 1020040025245.
English Abstract for Publication No. 2005-033223.
Search Report of Sep. 25, 2008 in corresponding Taiwan Patent Application No.: 095126328.
Office Action issued Sep. 26, 2008 in corresponding Chinese Patent Application No.: 200610106184.5.

Affiliated with

Also associated with

Rating

Nonvolatile memory devices and methods of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory devices and methods of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory devices and methods of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4072275