Nonvolatile memory devices and methods of fabricating the same

Details Nonvolatile memory devices and methods of fabricating the same Nonvolatile memory devices and methods of fabricating the same

2011-03-29

2011-03-29

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21680

Reexamination Certificate

active

07915118

ABSTRACT:
A nonvolatile memory device may include a semiconductor substrate, a floating gate electrode on the semiconductor substrate that includes an acute-angled tip at an upper end, and a control gate electrode insulated from the floating gate electrode and facing at least a portion of the floating gate electrode, wherein an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode is smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode.

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