Nonvolatile memory devices

Details Nonvolatile memory devices Nonvolatile memory devices

2006-08-04

2010-12-28

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257S332000, C257SE27103, C257SE29129, C257SE29300

Reexamination Certificate

active

07859042

ABSTRACT:
Methods of fabricating a nonvolatile memory device include forming a trench mask pattern on a semiconductor substrate including a first region and a second region. Substrate trenches defining active regions are formed in the semiconductor substrate in the first region and the second region using the trench mask pattern as a mask. Device isolation layer patterns are formed on the semiconductor substrate including the trench mask pattern and substrate trenches. The device isolation patterns fill the substrate trenches in the first region and in the second region. First and second openings are formed exposing top surfaces of the corresponding active regions in the first and second regions by removing the trench mask pattern. The second opening has a greater width than the first opening. A first lower conductive pattern is formed in the first opening and has a bottom portion in a lower region of the first opening and an extended portion extending from the bottom portion to an upper region of the first opening. The extended portion has a smaller width than the bottom portion. A second lower conductive pattern is formed filling the second opening.

REFERENCES:
patent: 5680345 (1997-10-01), Hsu et al.
patent: 6413818 (2002-07-01), Huang et al.
patent: 6498064 (2002-12-01), Tseng
patent: 6818511 (2004-11-01), Lee
patent: 6838342 (2005-01-01), Ding
patent: 6841444 (2005-01-01), Shimizu
patent: 6906377 (2005-06-01), Ni et al.
patent: 7303958 (2007-12-01), Jeong
patent: 2002/0195646 (2002-12-01), Tseng
patent: 2004/0087089 (2004-05-01), Matsui et al.
patent: 2005/0142765 (2005-06-01), Joo
patent: 2002-246845 (2002-08-01), None
patent: 1020030092997 (2003-12-01), None
patent: 1020040005230 (2004-01-01), None

Affiliated with

Also associated with

Rating

Nonvolatile memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4218787