Nonvolatile memory device, method of fabricating and method...

Details Nonvolatile memory device, method of fabricating and method... Nonvolatile memory device, method of fabricating and method...

2006-10-31

2009-08-25

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C257SE23147

Reexamination Certificate

active

07579236

ABSTRACT:
A nonvolatile memory device may include a semiconductor substrate; first and second floating gate electrodes formed on the semiconductor substrate; a control gate electrode formed on the first and second floating gate electrodes that may include a line body and a first leg, second leg, and third leg extending vertically from the line body toward the semiconductor substrate; and an inter-layer insulating film interposed between the semiconductor substrate and a lower end of the first leg and between the semiconductor substrate and a lower end of the second leg.

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Korean Office Action dated Sep. 21, 2007.
Korean Notice of Allowance dated Mar. 11, 2008.

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