Nonvolatile memory device and method of manufacturing the same

Details Nonvolatile memory device and method of manufacturing the same Nonvolatile memory device and method of manufacturing the same

2006-02-15

2009-12-22

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S240000, C438S257000, C438S259000, C438S266000, C257S314000, C257S315000, C257SE21209

Reexamination Certificate

active

07635628

ABSTRACT:
The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a transition metal oxide (TMO) on the tunneling oxide, a blocking oxide film formed on the floating gate, a gate electrode formed on the blocking oxide film.

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Korean Office Action (with English translation) dated Apr. 25, 2006.

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