Nonvolatile memory device and method of manufacturing the same

Details Nonvolatile memory device and method of manufacturing the same Nonvolatile memory device and method of manufacturing the same

2007-01-16

2009-08-25

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S258000, C438S259000, C438S260000, C438S262000, C438S264000, C257SE21209, C257SE21682

Reexamination Certificate

active

07579237

ABSTRACT:
A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the semiconductor substrate, forming a first preliminary polysilicon layer in communication with the tunneling insulation layer and the device isolation regions, forming a preliminary amorphous silicon layer on the first preliminary silicon layer, forming a second preliminary polysilicon layer on the preliminary amorphous silicon layer, and patterning the second preliminary polysilicon layer, the preliminary amorphous silicon layer, and the first preliminary polysilicon layer to form a floating gate layer.

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