Nonvolatile memory device and method of manufacturing the same

Details Nonvolatile memory device and method of manufacturing the same Nonvolatile memory device and method of manufacturing the same

2007-04-24

2007-04-24

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S288000

Reexamination Certificate

active

11504702

ABSTRACT:
Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

REFERENCES:
patent: 6413819 (2002-07-01), Zafar et al.
patent: 6574144 (2003-06-01), Forbes
patent: 6870765 (2005-03-01), Fujiwara
patent: 6927136 (2005-08-01), Lung et al.
patent: 7022571 (2006-04-01), Chang et al.

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