Nonvolatile memory device and method of forming same

Details Nonvolatile memory device and method of forming same Nonvolatile memory device and method of forming same

2006-08-15

2006-08-15

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S596000

Reexamination Certificate

active

07091090

ABSTRACT:
In a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory device, a plurality of first gates may be formed on a semiconductor substrate. A plurality of charge storage spacers may be formed on the plurality of first gates so that a given charge storage spacer may be disposed on a sidewall of a given first gate. A plurality of second gates may be disposed on the plurality of first gates so that a given second gate is on a sidewall of a given first gate and covers a given charge storage spacer.

REFERENCES:
patent: 6177318 (2001-01-01), Ogura et al.
patent: 2001-156188 (2001-06-01), None
patent: 2002-65858 (2002-08-01), None
Chang, “A New SONOS Memory Using Source-Side Injection for Programming”, Jul. 7, 1998, IEEE Electron Device Letters, vol. 19, No. 7, pp. 253-255.

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